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RFF60P06
Data Sheet September 1998 File Number
3975.2
25A, 60V, 0.030 Ohm, P-Channel Power MOSFET
The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. Formerly developmental type TA09835. Commercial Version: RFG60P06E. Current is limited by the package capability.
Features
* 25A, 60V * rDS(ON) = 0.030 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 150oC Operating Temperature * Reliability Screened
Symbol
D
G
Ordering Information
PART NUMBER RFF60P06 PACKAGE TO-254AA BRAND RFF60P06
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-254AA
GATE SOURCE DRAIN
PACKAGE TAB (ISOLATED)
CAUTION: Berylia Warning per MIL-S-19500. Refer to package specifications.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999.
RFF60P06
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFF60P06 -60 -60 20 25 (Note 5) Refer to Peak Current Curve Refer to UIS Curve 125 1.0 -55 to 150 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
W W/oC oC
oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RJC RJA VGS = 0 to -20V VGS = 0 to -10V VGS = 0 to -2V VDD = -30V, ID = 25A, RL = 1.2 IG(REF) = -4.2mA (Figures 18, 19) TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS,VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VGS = 20V, TC = 125oC ID = 25A, VGS = -10V, (Figure 9) VDD = -30V, ID = 25A, RL = 1.2, VGS = -10V RG = 2.35 (Figures 13, 16, 17) MIN -60 -2.0 TYP -3.0 25 50 80 30 7200 1800 400 MAX -4.5 -25 -250 100 0.030 195 70 125 200 75 275 450 225 15 1.0 48 UNITS V V A A A ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
VDS = -25V, VGS = 0V f = 1MHz
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) 4. Current is limited by package capability. SYMBOL VSD trr ISD = -25A ISD = -25A, dISD/dt = -100A/s TEST CONDITIONS MIN TYP -1.1 130 MAX -1.5 200 UNITS V ns
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RFF60P06 Typical Performance Curves
Unless Otherwise Specified
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 ID , DRAIN CURRENT (A)
-30 -25 -20 -15 -10 -5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t1 t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-500
-103
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS:
IDM , PEAK CURRENT (A)
ID , DRAIN CURRENT (A)
-100 100s
150 - T C I = I 25 --------------------- 125
-102
1ms -10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED VDSS MAX = -60V -100 10ms 100ms DC
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = -10V -101 10-5 10-4 10-3 10-2 10-1
TC = 25oC 100 101
-1 -1
-10 VDS , DRAIN-TO-SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
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RFF60P06 Typical Performance Curves
-200 IAS , AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) ID , DRAIN CURRENT (A) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-150 -125 -100 -75 -50
VGS = -10V VGS = -20V
VGS = -8V
VGS = -7V
-100 -75
PULSE DURATION = 250s TC = 25oC VGS = -6V
STARTING TJ = 25oC
STARTING TJ = 150oC -10
-25 0
VGS = -4.5V
VGS = -5V
0.1
1 10 tAV, TIME IN AVALANCHE (ms)
100
0
-2 -4 -6 -8 VDS, DRAIN TO SOURCE VOLTAGE (V)
-10
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
-150 -125 -100 -75 -50 -25 0 0
2.5 150oC NORMALIZED DRAIN TO SOURCE ON RESISTANCE VDD = -15V PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -55oC 25oC PULSE DURATION = 250s, VGS = -10V, ID = 25A 2.0
1.5
1.0
0.5
-2
-4
-6
-8
-10
0 -80
-40
0
40
80
120
160
VGS, GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
2.0
VGS = VDS, ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
2.0 ID = 250A
NORMALIZED GATE THRESHOLD VOLTAGE
1.5
1.5
1.0
1.0
0.5
0.5
0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
0 -80
-40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
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RFF60P06 Typical Performance Curves
8000 CISS C, CAPACITANCE (pF) 6000
Unless Otherwise Specified
(Continued)
-60 VDS , DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS -45 VDD = BVDSS -7.5 -10 VGS , GATE TO SOURCE VOLTAGE (V)
VGS = 0V, f = 0.1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS
-30
4000 COSS 2000 CRSS 0 0 -5 -10 -15 -20 VDS , DRAIN TO SOURCE VOLTAGE (V) -25
RL = 1.0 IG(REF) = 4.2mA VGS = -10V 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.50 BVDSS 0.25 BVDSS
-5.0
-15
-2.5
0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuit and Waveforms
VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0
+
VDD VDD
0V VGS
DUT tP IAS 0.01
IAS tP BVDSS VDS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) VDS RL VGS 0 tr 10%
tOFF td(OFF) tf 10%
VDD VGS RGS
+
VDS VGS 0
90%
90%
DUT
10% 50% PULSE WIDTH 90% 50%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
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RFF60P06 Test Circuit and Waveforms (Continued)
VDS RL 0 VGS = -2V VGS VDD
+
Qg(TH)
VDS
-VGS Qg(-10) VDD Qg(TOT) 0 IG(REF)
VGS = -10V
DUT IG(REF)
VGS = -20V
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Data Packages - Intersil Power Transistors
TX and TXV Equivalents 1. TX/TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning D. Group A E. Group B F. Group C - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. TX/TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6)
D. Group A E. Group B
F. Group C
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RFF60P06 PSPICE Electrical Model
.SUBCKT RFF60P06 2 1 3 CA 12 8 1.01e-8 CB 15 14 1.05e-8 CIN 6 8 6.9e-9
10 5 DPLCAP 6 8 VTO 16 RDRAIN EBREAK 17 18 MOS2 21 6 RIN CIN 8 S1A 12 13 8 S1B CA 13 S2A 14 13 S2B CB 14 + 5 EDS 8 IT 15 17 MOS1 11 DBREAK RSOURCE 7 RBREAK 18 LSOURCE 3 +
REV 9/20/94
DRAIN LDRAIN 2
DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 5 11 17 18 -76.35 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 7.9e-9 LSOURCE 3 7 4.18e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 12.83e-3 RGATE 9 20 1.55 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.25e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.83
ESG + GATE 1 LGATE RGATE 9 EVTO 18 20 8
-
-
+
+
-
DBODY
RVTO 19 VBAT +
+ 6 EGS 8
-
-
-
.MODEL DBDMOD D (IS=1.24e-12 RS=4.72e-3 TRS1=1.43e-3 TRS2=-4.91e-7 CJO=6.98e-9 TT=1.5e-7) .MODEL DBKMOD D (RS=1.11e-1 TRS1=1.34e-3 TRS2=4.46e-12) .MODEL DPLCAPMOD D (CJO=15e-10 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.71 KP=31.5 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=9.42e-4 TC2=0) .MODEL RDSMOD RES (TC1=5.85e-3 TC2=7.69e-6) .MODEL RVTOMOD RES (TC1=-3.39e-3 TC2=1.07e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.6 VOFF=2.6) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.6 VOFF=4.6) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.16 VOFF=-3.84) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.84 VOFF=1.16)
.ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley.
4-187
RFF60P06 Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTX/JANTXV Equivalent)
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current On Resistance Gate Threshold Voltage NOTES: 5. Or 100% of Initial Reading (whichever is greater). 6. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 20V, TC = 25oC VDS = 80% Rated Value, TC = 25oC TC = 125oC at Rated ID ID = 1.0mA, TC = 25oC MAX 20 (Note 4) 25 (Note 4) 20% (Note 5) 20% (Note 5) UNITS nA A V
Screening Information
TEST Gate Stress Pind PDA Pre Burn-In Test (Note 1) Steady State Gate Bias (Gate Stress) VGS = -30V, t = 250s Optional 10% MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 168 hours MIL-S-19500, Group A, Subgroup 2 JANTX/JANTXV EQUIVALENT
Interim Electrical Tests (Note 6) Steady State Reverse Bias (Drain Stress)
Final Electrical Tests (Note 6) NOTE: 7. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance SYMBOL SOA IAS VSD VSD TEST CONDITIONS VDS = -48V, t = 10ms VGS(PEAK) = -15V, L = 0.1mH tH = 100ms; VH = 25V, IH = 4A tH = 500ms; VH = 25V, IH = 4A MAX 8.0 75 142 182 UNITS A A mV mV
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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